general description quick reference data glass passivated, sensitive gate symbol parameter max. max. unit triacs in a plastic envelope, intended for use in general purpose BT131- 500 600 bidirectional switching and phase v drm repetitive peak off-state voltages 500 600 v control applications. these devices i t(rms) rms on-state current 1 1 a are intended to be interfaced directly i tsm non-repetitive peak on-state current 16 16 a to microcontrollers, logic integrated circuits and other low power gate trigger circuits. pinning - to92 pin configuration symbol pin description 1 main terminal 2 2 gate 3 main terminal 1 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 v drm repetitive peak off-state - 500 1 600 1 v voltages i t(rms) rms on-state current full sine wave; t lead 51 ?c - 1 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 16 a t = 16.7 ms - 17.6 a i 2 ti 2 t for fusing t = 10 ms - 1.28 a 2 s di t /dt repetitive rate of rise of i tm = 1.5 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ms triggering t2+ g+ - 50 a/ms t2+ g- - 50 a/ms t2- g- - 50 a/ms t2- g+ - 10 a/ms i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 321 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3 a/ ms. b t131 series triacs http://www.luguang.cn mail:lge@luguang.cn
thermal resistances symbol parameter conditions min. typ. max. unit r th j-lead thermal resistance full cycle - - 60 k/w junction to lead half cycle - - 80 k/w r th j-a thermal resistance pcb mounted;lead length = 4mm - 150 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 0.4 3 ma t2+ g- - 1.3 3 ma t2- g- - 1.4 3 ma t2- g+ - 3.8 7 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 1.2 5 ma t2+ g- - 4.0 8 ma t2- g- - 1.0 5 ma t2- g+ - 2.5 8 ma i h holding current v d = 12 v; i gt = 0.1 a - 1.3 5 ma v t on-state voltage i t = 2.0 a - 1.2 1.5 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 ?c 0.2 0.3 - v i d off-state leakage current v d = v drm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; 5 15 - v/ ms off-state voltage exponential waveform; r gk = 1 kw t gt gate controlled turn-on i tm = 1.5 a; v d = v drm(max) ; i g = 0.1 a; - 2 - ms time di g /dt = 5 a/ms b t131 series triacs http://www.luguang.cn mail:lge@luguang.cn
fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus lead temperature t lead . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t lead 51?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 =180 120 90 60 30 bt132d 0 0 it(rms) / a ptot / w tmb(max) / c 125 1 113 101 89 77 65 53 41 -50 0 50 100 150 0 0.2 0.4 0.6 0.8 1 1.2 bt132d 51 c tlead / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 bt132d t / s itsm / a t i tsm time i tj initial = 25 c max t t2- g+ quadrant di /dt limit t 0.01 0.1 1 10 0 0.5 1 1.5 2.0 2.5 3 bt132d surge duration / s it(rms) / a 10 100 1000 0 bt136 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t 5 10 15 20 -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) b t131 series triacs http://www.luguang.cn mail:lge@luguang.cn
fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-lead , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 BT131 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 0.5 1 1.5 2 bt134w vt / v it / a tj = 125 c typ max tj = 25 c vo = 1.0 v rs = 0.21 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 1 10 zth j-sp (k/w) 100 t p p t d unidirectional bidirectional bt134w -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c dvd/dt (v/us) b t131 series triacs http://www.luguang.cn mail:lge@luguang.cn
mechanical data dimensions in mm net mass: 0.2 g fig.13. to92 ; plastic envelope. notes 1. epoxy meets ul94 v0 at 1/8". 0.48 0.40 0.40 min 12.7 min 5.2 max 4.8 max 4.2 max 1.6 2.54 0.66 0.56 123 b t131 series triacs http://www.luguang.cn mail:lge@luguang.cn
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